| PART |
Description |
Maker |
| MAX1626 MAX1626ESA MAX1626-MAX1627 MAX1627 MAX1627 |
5V/3.3V or Adjustable / 100% Duty-Cycle / High-Efficiency / Step-Down DC-DC Controllers
5V/3.3V or Adjustable 100% Duty-Cycle High-Efficiency Step-Down DC-DC Controllers
5V/3.3V or Adjustable, 100% Duty-Cycle, High-Efficiency, Step-Down DC-DC Controllers 0.05 A SWITCHING CONTROLLER, 300 kHz SWITCHING FREQ-MAX, PDSO8
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM
256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
|
AMIC Technology, Corp.
|
| IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道，双循环取消选择静态RAM
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
|
| CY7C1145V18-300BZXC CY7C1156V18-300BZXC CY7C1141V1 |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
| SWE12800 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE210000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| KXT311LHS |
High number of cycle
|
C&K Components
|
| SWE61500 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE121600 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE121200 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE1270 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
